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IXTA3N120

Part No IXTA3N120
Manufacturer IXYS
Catalog FETs - Single
Description High Voltage Power MOSFETs | MOSFET N-CH 1.2KV 3A TO-263
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1200V
Id - Continuous Drain Current 3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 4.5Ohm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 42nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1350pF at 25V
Power Dissipation (Maximum) 200W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-263 (IXTA)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191240-IXTA3N120
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTA3N120 CAD Model

Description

The IXYS IXTA3N120 is an N-channel MOSFET transistor with a TO-263 (IXTA) supplier device package.

  • Supplier Device Package: TO-263 (IXTA)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C ~ 150°C
  • Manufacturer Homepage: www.ixys.com
  • Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Maximum Gate Source Voltage: ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1350pF @ 25V
  • Supply and Demand Status: Sufficient
  • Manufacturer Pack Quantity: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.4030 $51.2240
20+ $5.2538 $105.0760
30+ $5.0896 $152.6880
41+ $4.9254 $201.9414
53+ $4.7612 $252.3436
71+ $4.2687 $303.0777
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,238 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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