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Same model may have multiple batches, images only for reference.
IXTA152N085T Real Image
Same model may have multiple batches, images only for reference.

IXTA152N085T

Part No IXTA152N085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 152A TO263  /  N-Channel 85 V 152A (Tc) 360W (Tc) Surface Mount TO-263AA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 152A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 25 V
Power Dissipation (Max) 360W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1180967-IXTA152N085T
Ultra Librarian 3D Model Ultra Librarian IXTA152N085T CAD Model

Description

The IXYS 1180967-IXTA152N085T is a high-performance N-Channel MOSFET designed for use in applications that require a high level of reliability.

  • Maximum Drain-Source Voltage: 85V
  • Continuous Drain Current: 152A
  • Package: TO-263AB
  • Operating Temperature Range: -55°C to 175°C
  • Rds On: 7mOhm @ 25A, 10V
  • Gate Charge: 114nC @ 10V

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