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IXTA152N085T

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Part No	IXTA152N085T
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 85V 152A TO263 / N-Channel 85 V 152A (Tc) 360W (Tc) Surface Mount TO-263AA
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	TrenchMV™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	85 V
Current - Continuous Drain (Id) @ 25°C	152A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	114 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 25 V
Power Dissipation (Max)	360W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	TO-263AA
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50
Win Source Part Number	1180967-IXTA152N085T
Ultra Librarian 3D Model	Ultra Librarian IXTA152N085T CAD Model

Description

The IXYS 1180967-IXTA152N085T is a high-performance N-Channel MOSFET designed for use in applications that require a high level of reliability.

Maximum Drain-Source Voltage: 85V
Continuous Drain Current: 152A
Package: TO-263AB
Operating Temperature Range: -55°C to 175°C
Rds On: 7mOhm @ 25A, 10V
Gate Charge: 114nC @ 10V

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