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IXGA20N60B

Part No IXGA20N60B
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 40A 150W TO263AA / IGBT 600 V 40 A 150 W Surface Mount TO-263AA
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series HiPerFAST™
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Power - Max 150 W
Switching Energy 150µJ (on), 700µJ (off)
Input Type Standard
Gate Charge 90 nC
Td (on/off) @ 25°C 15ns/150ns
Test Condition 480V, 20A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AA
Base Product Number IXGA20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1005954-IXGA20N60B
Ultra Librarian 3D Model Ultra Librarian IXGA20N60B CAD Model

Description

The IXGA20N60B is a high-voltage, high-speed Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. This IGBT is designed for various high-power switching applications where efficiency and fast switching are critical. It is commonly used in applications such as uninterruptible power supplies (UPS), induction heating, and motor control circuits.

Applications:

  • Uninterruptible Power Supplies (UPS): Used in UPS systems to switch power efficiently during power outages.
  • Induction Heating: Employed in induction heating systems for fast and efficient power delivery.
  • Motor Control: Utilized in motor drives for precise control of motor speed and torque.
  • Welding Equipment: Used in welding machines for high-frequency switching and power control.
  • Power Factor Correction (PFC) Circuits: Integrated into PFC circuits to improve power factor and reduce harmonic distortion.

Features:

  • High Voltage Capability: Withstands high collector-emitter voltages (VCE).
  • Fast Switching Speed: Enables efficient operation at high frequencies.
  • Low Saturation Voltage: Minimizes power dissipation and improves efficiency.
  • Avalanche Capability: Provides robustness against voltage transients.
  • RoHS Compliant: Environmentally friendly due to the absence of hazardous substances.

Benefits:

  • Improved Efficiency: Fast switching and low saturation voltage contribute to higher efficiency in power conversion circuits.
  • Reduced Power Dissipation: Lower saturation voltage minimizes power loss, leading to cooler operation.
  • Enhanced Reliability: High voltage and current capabilities ensure reliable performance in demanding applications.
  • Compact Design: Allows for smaller and more compact power supply designs.
  • Cost-Effective: Provides a balance of performance and cost for various applications.

Technical Specifications:

The IXGA20N60B features a collector-emitter voltage (VCE) of 600V, a collector current (IC) of 20A, and a gate charge (Qg) of typically 65nC. Its switching speed is characterized by a turn-on delay time of approximately 20ns and a turn-off delay time of around 50ns. The IGBT is typically packaged in a TO-220 package, which allows for effective heat dissipation. The operating junction temperature ranges from -55°C to +150°C. The gate threshold voltage (VGE(th)) is typically around 5V.

Note: Always refer to the official IXYS datasheet for the most accurate and up-to-date specifications and application guidelines when using the IXGA20N60B IGBT in your designs.

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