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IXFT32N50

Name: IXFT32N50
Brand: IXYS
SKU: 608451
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXFT32N50
Manufacturer	IXYS
Catalog	FETs - Single
Description	HiPerFET Power MOSFETs \| MOSFET N-CH 500V 32A TO-268
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	500V
Id - Continuous Drain Current	32A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	150mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 4mA
Gate Charge (Qg) (Maximum) at Vgs	300nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	5700pF at 25V
Power Dissipation (Maximum)	360W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	TO-268
Manufacturer Package	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Manufacturer Pack Quantity	30
MSL Level	1 (Unlimited)
Win Source Part Number	1191139-IXFT32N50
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFT32N50 CAD Model

Description

The IXYS 1191139-IXFT32N50 is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 500V and a continuous drain current of 32A.

Drain-Source Breakdown Voltage: 500V
Continuous Drain Current: 32A
Maximum On-State Resistance: 150mOhm @ 15A, 10V
Gate-Source Voltage Threshold: 4V @ 4mA
Gate Charge: 300nC @ 10V
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power Dissipation: Up to 360W
Status: Obsolete
Supply and Demand Status: Limited

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