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Same model may have multiple batches, images only for reference.
IXFP12N50PM Real Image
Same model may have multiple batches, images only for reference.

IXFP12N50PM

Part No IXFP12N50PM
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6A TO220AB / N-Channel 500 V 6A (Tc) 50W (Tc) Through Hole TO-220-3
Datasheet
IXFP12N50PM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1830 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP12
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1224632-IXFP12N50PM
Ultra Librarian 3D Model Ultra Librarian IXFP12N50PM CAD Model

Description

The IXFP12N50PM is a HiPerFET™, Polar N-Channel MOSFET designed for use in discrete semiconductor products like transistors and FETs.

  • Vdss: 500 V
  • Id @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
  • Package Type: TO-220-3
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
  • Operating Temperature: -55°C to 150°C (TJ)
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • ROHS3 Compliant: Yes

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