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Same model may have multiple batches, images only for reference.
IXFN80N50 Real Image
Same model may have multiple batches, images only for reference.

IXFN80N50

Part No IXFN80N50
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFET Power MOSFETs Single Die MOSFET | MOSFET N-CH 500V 80A SOT-227B
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 66A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 55mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 380nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 9890pF at 25V
Power Dissipation (Maximum) 700W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Chassis Mount
Supplier Device Package SOT-227B
Manufacturer Package SOT-227-4, miniBLOC
Manufacturer Pack Quantity 10
MSL Level Not Applicable
Win Source Part Number 1191124-IXFN80N50
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFN80N50 CAD Model

Description

The IXFN80N50 is a MOSFET transistor manufactured by IXYS.

  • Channel: N-channel
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 66A
  • Maximum On-Resistance @ 500mA and 10V: 55mOhm
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage @ 8mA: 4.5V
  • Gate Charge @ 10V: 380nC
  • Input Capacitance @ 25V: 9890pF
  • Power Dissipation: 700W
  • Package: SOT-227B
  • Operating Temperature Range: -55°C to 150°C
  • Ideal For: Applications such as power supplies, motor control, and lighting systems.

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