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IXFK66N50Q2 Real Image

Same model may have multiple batches, images only for reference.

IXFK66N50Q2 Real Image

Same model may have multiple batches, images only for reference.

IXFK66N50Q2

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Part No	IXFK66N50Q2
Manufacturer	IXYS
Catalog	FETs - Single
Description	HiPerFET Power MOSFETs Q2-Class \| MOSFET N-CH 500V 66A TO-264
Sample
Rohs State
ECAD Module
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Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	500V
Id - Continuous Drain Current	66A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	80mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id	4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs	200nC at 10V
Gate Source Voltage (Maximum)	±30V
Input Capacitance (Ciss) (Maximum) at Vds	8400pF at 25V
Power Dissipation (Maximum)	735W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-264AA (IXFK)
Manufacturer Package	TO-264-3, TO-264AA
Manufacturer Pack Quantity	25
MSL Level	1 (Unlimited)
Win Source Part Number	1191102-IXFK66N50Q2
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFK66N50Q2 CAD Model

Alternative Products

Description

The IXYS IXFK66N50Q2 is a MOSFET transistor that has a Vds - Drain-Source Breakdown Voltage of 500V and an Id - Continuous Drain Current of 66A.

Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 66A
Series: TO-264AA (IXFK)
Manufacturer Pack Quantity: 25
Status: Obsolete
Supply and Demand Status: Limited
Power Dissipation: 735W
Input Capacitance: 8400pF @ 25V
Description: It is a valuable asset for those who require its unique features and capabilities.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
2+	$46.9219	$93.8438
3+	$38.5008	$115.5024
5+	$37.2973	$186.4865
7+	$36.0938	$252.6566
9+	$34.8914	$314.0226
12+	$31.2820	$375.3840

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