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Same model may have multiple batches, images only for reference.
IXFK32N100Q3 Real Image
Same model may have multiple batches, images only for reference.

IXFK32N100Q3

Part No IXFK32N100Q3
Manufacturer IXYS
Catalog FETs - Single
Description HiperFET Power MOSFETs Q3-Class | MOSFET N-CH 1000V 32A TO-264
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 32A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 320mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 6.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 195nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 9940pF at 25V
Power Dissipation (Maximum) 1250W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-264AA (IXFK)
Manufacturer Package TO-264-3, TO-264AA
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1191091-IXFK32N100Q3
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFK32N100Q3 CAD Model

Description

The IXFK32N100Q3 is a MOSFET transistor manufactured by IXYS.

  • Power Dissipation: 1250W
  • Vds - Drain-Source Breakdown Voltage: 1000V
  • Mounting Style: Through hole
  • Packaging: Tube
  • Temperature Range: -55°C to 150°C
  • Manufacturer Pack Quantity: 25

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