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Same model may have multiple batches, images only for reference.
IXFH80N10 Real Image
Same model may have multiple batches, images only for reference.

IXFH80N10

Part No IXFH80N10
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFET Power MOSFETs | MOSFET N-CH 100V 80A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 80A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 12.5mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 180nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4800pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247AD (IXFH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191074-IXFH80N10
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH80N10 CAD Model

Description

The IXFH80N10 is a N-channel MOSFET transistor manufactured by IXYS.

  • Manufacturer: IXYS
  • Channel Type: N-channel MOSFET
  • Category: Discrete semiconductor products
  • Mounting Style: Through-hole
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 80A
  • Maximum On-Resistance: 12.5mOhm @ 40A and 10V
  • Gate Charge: 180nC @ 10V
  • Input Capacitance: 4800pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 4V @ 4mA
  • Package: TO-247AD (IXFH)
  • Power Dissipation: 300W
  • Status: Obsolete
  • Manufacturer Pack Quantity: 30

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