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IXFH70N20Q3

Part No IXFH70N20Q3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 70A TO247AD / N-Channel 200 V 70A (Tc) 690W (Tc) Through Hole TO-247AD (IXFH)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Q3 Class
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3150 pF @ 25 V
Power Dissipation (Max) 690W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
Base Product Number IXFH70
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1066179-IXFH70N20Q3
Ultra Librarian 3D Model Ultra Librarian IXFH70N20Q3 CAD Model

Description

The IXYS electronic component is a high-performance MOSFET transistor that is designed to provide reliable performance.

  • Maximum Drain to Source Voltage: 200V
  • Continuous Drain Current: 70A
  • Package: TO-247-3 package
  • Gate Charge: 67 nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.7854 $62.3562
6+ $17.0547 $102.3282
10+ $16.5218 $165.2180
13+ $15.9888 $207.8544
17+ $15.4558 $262.7486
22+ $13.8570 $304.8540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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