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IXFH6N90

Name: IXFH6N90
Brand: IXYS
SKU: 1180714
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXFH6N90
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 900V 6A TO247AD / N-Channel 900 V 6A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Datasheet	IXFH6N90 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2600 pF @ 25 V
Power Dissipation (Max)	300W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD (IXFH)
Package / Case	TO-247-3
MSL Level	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	IXFH6N90-NDR
Standard Package	30
Win Source Part Number	1180714-IXFH6N90
Ultra Librarian 3D Model	Ultra Librarian IXFH6N90 CAD Model

Alternative Products

Description

The IXFH6N90 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products. IXFH6N90 is a part of the HiPerFET™ series.

Drain to Source Voltage: 900V
Continuous Drain Current: 6A @ 25°C
Rds On (Max): 2Ohm @ 3A and 10V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25V
Temperature Range: -55°C to 150°C

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