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IXFB150N65X2

Name: IXFB150N65X2
Brand: IXYS
SKU: 1216723
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXFB150N65X2
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 650V 150A PLUS264 / N-Channel 650 V 150A (Tc) 1560W (Tc) Through Hole PLUS264™
Datasheet	IXFB150N65X2 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™, Ultra X2
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	17mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	430 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	20400 pF @ 25 V
Power Dissipation (Max)	1560W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA
Base Product Number	IXFB150
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	IXFB150N65X2X,IXFB150N65X2X-ND,IXFB150N65X2XINACTIVE
Standard Package	25
Win Source Part Number	1216723-IXFB150N65X2
Ultra Librarian 3D Model	Ultra Librarian IXFB150N65X2 CAD Model

Description

IXYS transistor provides a high-quality N-Channel MOSFET transistor with a drain to source voltage of 650V manufactured by IXYS IXYS.

Drain to Source Voltage: 650V
Continuous Drain Current: 150A (Tc) @ 25℃
Maximum Rds On: 17mOhm @ 75A and 10V
Gate Charge: 430 nC @ 10V
Input Capacitance: 20400 pF @ 25V
Junction Temperature Range: -55℃ to 150℃
Package: TO-264-3, TO-264AA

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