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Same model may have multiple batches, images only for reference.
BSS315P H6327 Infineon Technologies – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

BSS315P H6327

Part No BSS315P H6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSS315P H6327 Infineon Technologies MOSFETs P-Ch -30V -1.5A SOT-23-3 datasheet, inventory, & pricing.
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Product Category MOSFETs
RoHS Details
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 1.5 A
Rds On - Drain-Source Resistance 113 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 2.3 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 500 mW
Channel Mode Enhancement
Qualification AEC-Q100
Packaging Reel
Brand Infineon Technologies
Configuration Single
Fall Time 7.5 ns
Forward Transconductance - Min 2.7 S
Product Type MOSFETs
Rise Time 6.5 ns
Series BSS315
Factory Pack Quantity Factory Pack Quantity 3000
Subcategory Transistors
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 14.3 ns
Typical Turn-On Delay Time 5 ns
Part # Aliases SP000928946 BSS315PH6327XT BSS315PH6327XTSA1
Unit Weight 0.000282 oz
Ultra Librarian 3D Model Ultra Librarian BSS315P H6327 CAD Model

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