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Same model may have multiple batches, images only for reference.
IXDN75N120 Real Image
Same model may have multiple batches, images only for reference.

IXDN75N120

Part No IXDN75N120
Manufacturer IXYS
Catalog IGBTs - Modules
Description IGBT MOD 1200V 150A 660W SOT227B
Datasheet
IXDN75N120 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr IXYS
Package Tube
Product Status Active
IGBT Type NPT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 150 A
Power - Max 660 W
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 75A
Current - Collector Cutoff (Max) 4 mA
Input Capacitance (Cies) @ Vce 5.5 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227B
Base Product Number IXDN75
Standard Package 10 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 847079-IXDN75N120
Ultra Librarian 3D Model Ultra Librarian IXDN75N120 CAD Model

Description

The IXDN75N120 is a high-power IGBT module designed for various applications in the field of discrete semiconductor products. It belongs to the category of Transistors - IGBTs and features a single configuration.

  • Power: 660 W
  • Voltage Breakdown: 1200 V
  • Maximum Collector Current: 150 A
  • Input Type: Standard
  • IGBT Type: NPT
  • Mounting Type: Chassis Mount
  • Package: SOT-227-4, miniBLOC
  • Operating Temperature: -40°C to 150°C
  • Manufacturer: IXYS
  • REACH Affected: No

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $25.2125 $75.6375
6+ $20.6872 $124.1232
9+ $20.0404 $180.3636
12+ $19.3936 $232.7232
16+ $18.7480 $299.9680
21+ $16.8087 $352.9827
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Availability: 2,997 pieces
MOQ: 3 pcs
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