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Same model may have multiple batches, images only for reference.
IXBT2N250 Real Image
Same model may have multiple batches, images only for reference.

IXBT2N250

Part No IXBT2N250
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 2500V 5A 32W TO268 / IGBT 2500 V 5 A 32 W Surface Mount TO-268AA
Datasheet
IXBT2N250 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series BIMOSFET™
Package Tube
Voltage - Collector Emitter Breakdown (Max) 2500 V
Current - Collector (Ic) (Max) 5 A
Current - Collector Pulsed (Icm) 13 A
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 2A
Power - Max 32 W
Input Type Standard
Gate Charge 10.6 nC
Reverse Recovery Time (trr) 920 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268AA
Base Product Number IXBT2
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1014896-IXBT2N250
Ultra Librarian 3D Model Ultra Librarian IXBT2N250 CAD Model

Description

The IXYS 1014896-IXBT2N250 is a high-quality IGBT transistor that is suitable for use in a wide range of electronic devices.

  • Collector-Emitter Breakdown Voltage: 2500V
  • Maximum Power Dissipation: 32W
  • Gate Charge: 10.6 nC
  • Mounting: Surface Mount
  • Package: TO-268-3, D²Pak
  • Operating Temperature Range: -55°C to 150°C

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23+ $13.5821 $312.3883
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