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Same model may have multiple batches, images only for reference.
IXBH42N170A Real Image
Same model may have multiple batches, images only for reference.

IXBH42N170A

Part No IXBH42N170A
Manufacturer IXYS
Catalog IGBTs - Single
Description BIMOSFET Monolithic Bipolar MOS Transistor | IGBT 1700V 42A 357W TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 1700V
Current - Collector (Ic) (Maximum) 42A
Current - Collector Pulsed (Icm) 265A
Vce(on) (Maximum) at Vge, Ic 6V at 15V, 21A
Maximum Power 357W
Switching Energy 3.43mJ (on), 430μJ (off)
Input Type Standard
Gate Charge 188nC
Td (on/off) at 25°C 19ns/200ns
Test Condition 850V, 21A, 1Ohm, 15V
Reverse Recovery Time (trr) 330ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AD (IXBH)
Family Part Number IXB*42N170
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1190922-IXBH42N170A
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXBH42N170A CAD Model

Description

The IXYS IXBH42N170A is a discrete semiconductor product designed for through-hole mounting.

  • Component Type: IGBT
  • Collector Current: 42A
  • Voltage Collector Emitter Breakdown: 1700V
  • Gate Charge: 188nC
  • Switching Energy (On): 3.43mJ
  • Switching Energy (Off): 430μJ
  • Reverse Recovery Time: 330ns
  • Package: TO-247AD (IXBH)
  • Supply and Demand Status: Limited

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2+ $80.7294 $161.4588
3+ $78.1252 $234.3756
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