The IXBF20N360 is a single IGBT transistor from the BIMOSFET™ series by IXYS.

• Package: Tube
• Standard Package: 25
• Maximum Power: 230 W
• Reverse Recovery Time (trr): 1.7 μs
• IGBT Type: Not Specified
• Voltage Collector Emitter Breakdown (Max): 3600 V
• Current Collector Pulsed (Icm): 220 A
• Gate Charge: 43 nC
• Test Conditions: 1500V, 20A, 10Ohm, 15V
• Mounting Type: Through-Hole
• Package: i4-Pac™-5 (3 Leads)
• Supplier Device Package: ISOPLUS i4-PAC™
• Operating Temperature Range: -55°C ~ 150°C (TJ)
• Maximum Collector Current (Ic): 45 A
• Maximum Collector-Emitter Voltage (Vce(on)): 3.4V @ 15V, 20A