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IS61NLP102436B-200B3LI-TR

Part No IS61NLP102436B-200B3LI-TR
Manufacturer ISSI, Integrated Silicon Solution Inc
Catalog SRAM
Description IC SRAM 36MBIT 200MHZ 165FBGA
Datasheet
Sample
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Categories Integrated Circuits (ICs)
Manufacturer ISSI, Integrated Silicon Solution Inc
Packaging Reel package
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous
Memory Size 36Mb (1M x 36)
Clock Frequency 200MHz
Access Time 3.1ns
Memory Interface Parallel
Operating Supply Voltage 3.135 V ~ 3.465 V
Operating Temperature Range -40°C ~ 85°C (TA)
Mounting SMD
Package 165-TBGA
Manufacturer Package 165-TFBGA (13x15)
Win Source Part Number 777213-IS61NLP102436B-200B3LI-TR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IS61NLP102436B-200B3LI-TR CAD Model

Description

The IS61NLP102436B-200B3LI-TR is a high-speed synchronous pipelined burst Static RAM (SRAM) from ISSI (Integrated Silicon Solution Inc.). It is organized as 1,048,576 words x 36 bits and features a 200 MHz clock rate. This SRAM is designed for applications requiring very fast data access times, such as networking, telecommunications, and high-performance computing systems. The "LI" likely indicates a low-power version, and "TR" denotes tape and reel packaging.

Applications

  • Networking equipment (routers, switches)
  • Telecommunications systems
  • High-performance computing
  • Cache memory
  • Image processing

Features

  • 1,048,576 words x 36 bits organization
  • 200 MHz clock frequency
  • Synchronous pipelined burst operation
  • Single 3.3V power supply
  • LVTTL-compatible inputs and outputs
  • Internal input resistors on address lines
  • Byte write enable
  • Sleep mode for low power consumption
  • Available in a 100-pin TQFP package

Benefits

  • Extremely fast access times: Enables high-performance system operation.
  • Large memory capacity: Provides ample storage for demanding applications.
  • Low power consumption: Reduces energy consumption and heat dissipation.
  • Easy integration: Compatible with standard memory interfaces and protocols.
  • High reliability: Ensures stable and consistent performance.

Additional Details

The IS61NLP102436B-200B3LI-TR operates synchronously with the system clock. The pipelined burst architecture allows for continuous data transfers with minimal latency. The device supports byte write enables, allowing individual bytes within a word to be written. A sleep mode is provided to reduce power consumption when the device is not actively being used. The SRAM requires proper decoupling capacitors to ensure stable operation. Refer to the ISSI datasheet for detailed timing specifications and application guidelines. The 200B3 part means 200MHz, B revision, and Industrial temperature range. The 36-bit word size allows for the use of parity bits for error detection, which is critical in some high-reliability applications.

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