The IS61LV6416L-10T is a high-speed, low-power static RAM (SRAM) manufactured by Integrated Silicon Solution, Inc. (ISSI). This SRAM is designed for applications requiring fast access times and low power consumption, making it suitable for a variety of embedded systems and memory-intensive applications. The device offers a 64K x 16-bit memory array and operates at a supply voltage of 3.3V.

Applications

• Networking equipment: Routers, switches, and other network devices.
• Industrial control systems: PLCs, industrial computers, and automation equipment.
• Medical devices: Portable medical instruments and diagnostic equipment.
• Automotive systems: Engine control units (ECUs) and infotainment systems.
• Test and measurement equipment: Logic analyzers and oscilloscopes.

Features

• High-speed access time: 10 ns access time ensures fast data retrieval and storage.
• Low power consumption: Low active and standby current for energy-efficient operation.
• Single 3.3V power supply: Simplifies power supply design and reduces system cost.
• Fully static operation: No clock or refresh required for easy interface.
• Tri-state outputs: Allows for easy memory expansion and bus sharing.
• Data retention voltage: 2.0V minimum data retention voltage.
• Available in various package options: TSOP and other industry-standard packages for design flexibility.

Benefits

• Improved system performance: Fast access time contributes to enhanced system responsiveness and overall performance.
• Reduced power consumption: Low power consumption extends battery life in portable applications and reduces overall system power requirements.
• Simplified system design: Single power supply requirement simplifies power management and reduces component count.
• Increased reliability: Fully static operation eliminates the need for complex refresh cycles, improving reliability.
• Easy integration: Tri-state outputs enable seamless integration with other system components and memory expansion.

Additional Details

The IS61LV6416L-10T operates over an industrial temperature range, making it suitable for harsh environments. The device is available in RoHS-compliant packages, ensuring environmental compliance. The SRAM is organized as 65,536 words of 16 bits each. The device features separate data input and output pins, simplifying memory interface. The SRAM also features a chip enable (CE) input for device selection and an output enable (OE) input for controlling data output. The write enable (WE) input controls data writes to the memory array.