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Same model may have multiple batches, images only for reference.
SIGC12T60SNCX1SA2
Same model may have multiple batches, images only for reference.

SIGC12T60SNCX1SA2

Part No SIGC12T60SNCX1SA2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC12T60SNCX1SA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 10 A
Current - Collector Pulsed (Icm) 30 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
Input Type Standard
Td (on/off) @ 25°C 29ns/266ns
Test Condition 400V, 10A, 25Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Other Names SP000012014,448-SIGC12T60SNCX1SA2
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
Win Source Part Number 1277473-SIGC12T60SNCX1SA2
Ultra Librarian 3D Model Ultra Librarian SIGC12T60SNCX1SA2 CAD Model

Description

The Infineon SIGC12T60SNCX1SA2 is a single IGBT transistor that is part of the Discrete Semiconductor Products category.

  • IGBT Type: NPT
  • Voltage Breakdown: 600V
  • Maximum Collector Current: 10A
  • Switching Energy: Not specified
  • Turn-On Time: 29ns @ 25°C
  • Turn-Off Time: 266ns @ 25°C
  • Package: Die
  • Temperature Range: -55°C to 150°C

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