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Same model may have multiple batches, images only for reference.
SIGC12T60NCX1SA1
Same model may have multiple batches, images only for reference.

SIGC12T60NCX1SA1

Part No SIGC12T60NCX1SA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC12T60NCX1SA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 10 A
Current - Collector Pulsed (Icm) 30 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
Input Type Standard
Td (on/off) @ 25°C 21ns/110ns
Test Condition 300V, 10A, 27Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Other Names SP000012010,448-SIGC12T60NCX1SA1
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
Win Source Part Number 1277470-SIGC12T60NCX1SA1
Ultra Librarian 3D Model Ultra Librarian SIGC12T60NCX1SA1 CAD Model

Description

The 1277470-SIGC12T60NCX1SA1 is an IGBT transistor from Infineon Technologies.

  • Breakdown Voltage: 600 V
  • Maximum Collector Current: 10 A
  • IGBT Type: NPT
  • Vce(on): 2.5V @ 15V and 10A
  • Turn-Off Time: 110 ns
  • Turn-On Time: 21 ns @ 25°C
  • REACH: Unaffected
  • ECCN: OBSOLETE

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