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Same model may have multiple batches, images only for reference.
SGP04N60XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SGP04N60XKSA1

Part No SGP04N60XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 9.4A 50W TO220-3 / Trans IGBT Chip N-CH 600V 9.4A 50000mW 3-Pin(3+Tab) TO-220AB Tube
Datasheet
SGP04N60XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Part Status Obsolete(EOL)
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 9.4A
Current - Collector Pulsed (Icm) 19A
Vce(on) (Maximum) @ Vge, Ic 2.4V @ 15V, 4A
Power - Max 50W
Switching Energy 131μJ
Input Type Standard
Gate Charge 24nC
Td (on/off) @ 25°C 22ns/237ns
Test Condition 400V, 4A, 67 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-220-3
Manufacturer Package PG-TO220-3
Win Source Part Number 794196-SGP04N60XKSA1
Popularity Medium
Supply and Demand Status Limited
Quantity per package 500
Family Name SGP04N60XKSA1
Introduction Date March 01, 2000
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SGP04N60XKSA1 CAD Model

Description

The Infineon Technologies SGP04N60XKSA1 from Infineon Technologies is an NPT IGBT transistor with a collector-emitter voltage breakdown of 600V and a collector current of 9.4A.

  • Vce(on) (maximum): 2.4V @ 15V, 4A
  • Gate Charge: 24nC
  • Package: TO-220-3
  • Dimension: PG-TO220-3
  • Maximum Gate-Source Voltage: ±20V
  • Switching Energy: 131μJ
  • Operating Temperature: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products
  • Supply and Demand: Limited
  • Package Quantity: 500

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