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Same model may have multiple batches, images only for reference.
IMW65R107M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMW65R107M1HXKSA1

Part No IMW65R107M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET 650V NCH SIC TRENCH
Datasheet
IMW65R107M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202568-IMW65R107M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products-Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Ultra Librarian 3D Model Ultra Librarian IMW65R107M1HXKSA1 CAD Model

Description

Introducing the Infineon Technologies CoolSiC™ series N-Channel SiCFET (Silicon Carbide) transistor. Trust Infineon Technologies for all your transistor needs.

  • Series: CoolSiC™
  • Channel: N-Channel
  • Power Dissipation (Tc): 75W
  • Vdss: 650V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: Tube

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