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IRL2910L

Part No IRL2910L
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET POWER MOSFET | MOSFET N-CH 100V 55A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 55A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 26mOhm at 29A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 140nC at 5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 3700pF at 25V
Power Dissipation (Maximum) 3.8W, 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188463-IRL2910L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL2910L CAD Model

Description

The Infineon Technologies MOSFET is an N-channel type of electronic component with a Vds - Drain-Source Breakdown Voltage of 100V and an Id - Continuous Drain Current of 55A.

  • Manufacturer: Infineon Technologies
  • Type: N-channel MOSFET
  • Vds - Drain-Source Breakdown Voltage: 100V
  • Id - Continuous Drain Current: 55A
  • Gate-Source Voltage (th) (maximum) @ Id: 2V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 140nC @ 5V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Status: Obsolete
  • Supply and Demand: Limited
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA

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