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IRGP4750DPBF

Name: IRGP4750DPBF
Brand: Infineon Technologies
SKU: 605689
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRGP4750DPBF
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode \| IGBT 650V TO-247
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Voltage - Collector Emitter Breakdown (Maximum)	650V
Current - Collector (Ic) (Maximum)	70A
Current - Collector Pulsed (Icm)	105A
Vce(on) (Maximum) at Vge, Ic	2V at 15V, 35A
Maximum Power	273W
Switching Energy	1.3mJ (on), 500μJ (off)
Input Type	Standard
Gate Charge	105nC
Td (on/off) at 25°C	50ns/105ns
Test Condition	400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)	150ns
Temperature Range - Operating	-40°C ~ 175°C
Mounting Style	Through Hole
Manufacturer Package	TO-247-3
Supplier Device Package	TO-247AC
Manufacturer Pack Quantity	25
MSL Level	1 (Unlimited)
Win Source Part Number	1188377-IRGP4750DPBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRGP4750DPBF CAD Model

Description

The Infineon Technologies IRGP4750DPBF is an obsolete device that comes in a TO-247AC package with a mounting style of through-hole.

Package: TO-247AC
Mounting Style: through-hole
Current: 70A
Voltage: 650V
ECCN: EAR99
Power (max): 273W
Switching Energy (On): 1.3mJ
Switching Energy (Off): 500μJ
Supply and Demand Status: balanced
Manufacturer Pack Quantity: 25

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
5+	$12.8702	$64.3510
11+	$10.5602	$116.1622
17+	$10.2310	$173.9270
24+	$9.9007	$237.6168
31+	$9.5703	$296.6793
41+	$8.5805	$351.8005

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 340 pieces

MOQ: 5 pcs

Order Increment : 1 pcs

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