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Same model may have multiple batches, images only for reference.
IRG7PSH73K10 Infineon Technologies
Same model may have multiple batches, images only for reference.

IRG7PSH73K10

Part No IRG7PSH73K10
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 220A 1150W SUPER247
Datasheet
IRG7PSH73K10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 220A
Pulsed Collector Current 225A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 75A
Maximum Power Dissipation 1150W
Total Switching Energy(Ets) 7.7mJ (on), 4.6mJ (off)
Input Type Standard
Gate Charge 360nC
Turn-on and Turn-off delay time 63ns/267ns
Testing Conditions 600V, 75A, 4.7 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package SUPER-247 (TO-274AA)
Win Source Part Number 205438-IRG7PSH73K10
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG7PSH73K10 CAD Model

Description

The Infineon Technologies IGBT Type Trench is a high-performance insulated-gate bipolar transistor that is designed for use in a variety of applications.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Power Dissipation: 1150W
  • Total Switching Energy (on): 7.7mJ
  • Total Switching Energy (off): 4.6mJ
  • Turn-On Delay Time: 63ns
  • Turn-Off Delay Time: 267ns
  • Gate Charge: 360nC
  • Maximum Current Collector: 220A
  • Collector-Emitter Saturation Voltage (Max): 2.3V @ 15V, 75A
  • Package: SUPER-247 (TO-274AA)
  • Mounting: Through Hole

It is ideal for use in discrete semiconductor products.

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