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IRG7PK35UD1PBF

Name: IRG7PK35UD1PBF
Brand: Infineon Technologies
SKU: 605644
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRG7PK35UD1PBF
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode \| IGBT 1400V 40A 167W TO247AC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Voltage - Collector Emitter Breakdown (Maximum)	1400V
Current - Collector (Ic) (Maximum)	40A
Current - Collector Pulsed (Icm)	200A
Vce(on) (Maximum) at Vge, Ic	2.35V at 15V, 20A
Maximum Power	167W
Switching Energy	650μJ (off)
Input Type	Standard
Gate Charge	98nC
Td (on/off) at 25°C	-/150ns
Test Condition	600V, 20A, 10Ohm, 15V
Temperature Range - Operating	-40°C ~ 150°C
Mounting Style	Through Hole
Manufacturer Package	TO-247-3
Supplier Device Package	TO-247AC
Manufacturer Pack Quantity	25
MSL Level	1 (Unlimited)
Win Source Part Number	1188332-IRG7PK35UD1PBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRG7PK35UD1PBF CAD Model

Description

The Infineon Technologies IGBT is a high-performance transistor that can handle a maximum collector current of 40A and a voltage of 1400V.

Applications: AC motors
Output Configuration: half-bridge
Switching Energy: 650μJ (off)
Gate Charge: 98nC
Package: TO-247AC
Temperature Range: -40°C to 150°C
Status: obsolete
Supply and demand status: limited

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