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Same model may have multiple batches, images only for reference.
IRG7PH42UD-EP Real Image
Same model may have multiple batches, images only for reference.

IRG7PH42UD-EP

Part No IRG7PH42UD-EP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 1200V 85A 320W TO247AD
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 85A
Current - Collector Pulsed (Icm) 90A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 30A
Maximum Power 320W
Switching Energy 2.11mJ (on), 1.18mJ (off)
Input Type Standard
Gate Charge 157nC
Td (on/off) at 25°C 25ns/229ns
Test Condition 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 153ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AD
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1188327-IRG7PH42UD-EP
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG7PH42UD-EP CAD Model

Description

The IRG7PH42UD-EP is an obsolete electronic component manufactured by Infineon Technologies.

  • The supply and demand status is balanced.
  • The product is a MOSFET transistor with a voltage rating of 1200V and a current rating of 85A.
  • It has a TO-247AD package and is designed to operate in a temperature range of -55°C to 150°C.
  • The IRG7PH42UD-EP has a switching energy of 2.11mJ (on) and 1.18mJ (off) and a gate charge of 157nC.
  • It is a reliable and efficient device that can be used in various applications.

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