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Same model may have multiple batches, images only for reference.
IRG4PC60U-PPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PC60U-PPBF

Part No IRG4PC60U-PPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 75A 520W TO247AC
Datasheet
IRG4PC60U-PPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 75A
Pulsed Collector Current 300A
Collector-emitter saturation voltage(Max) 2V @ 15V, 40A
Maximum Power Dissipation 520W
Total Switching Energy(Ets) 280μJ (on), 1.1mJ (off)
Input Type Standard
Gate Charge 310nC
Turn-on and Turn-off delay time 39ns/200ns
Testing Conditions 480V, 40A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 1047317-IRG4PC60U-PPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4PC60U-PPBF CAD Model

Description

The Infineon Technologies 1047317-IRG4PC60U-PPBF is an IGBT (Insulated Gate Bipolar Transistor) that is designed for use in a variety of applications, including motor control, power supplies, and lighting.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 75A
  • Maximum Power Dissipation: 520W
  • Gate Charge: 310nC
  • Collector-Emitter Saturation Voltage: 2V @ 15V, 40A
  • Mounting: Through-hole technology
  • Supply and Demand: Balanced

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