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Same model may have multiple batches, images only for reference.
IRG4BC30U-S Real Image
Same model may have multiple batches, images only for reference.

IRG4BC30U-S

Part No IRG4BC30U-S
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) | IGBT 600V 23A 100W D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 23A
Current - Collector Pulsed (Icm) 92A
Vce(on) (Maximum) at Vge, Ic 2.1V at 15V, 12A
Maximum Power 100W
Switching Energy 160μJ (on), 200μJ (off)
Input Type Standard
Gate Charge 50nC
Td (on/off) at 25°C 17ns/78ns
Test Condition 480V, 12A, 23Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188244-IRG4BC30U-S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC30U-S CAD Model

Description

The IRG4BC30U-S is an IGBT transistor manufactured by Infineon Technologies in the open market.

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Style: SMD
  • Current - Collector Pulsed (Icm): 92A
  • Switching Energy: 160μJ (on), 200μJ (off)
  • Gate Charge: 50nC
  • Test Condition: 480V, 12A, 23Ohm, 15V
  • Current - Collector (Ic) (Maximum): 23A
  • Voltage - Collector Emitter Breakdown (Maximum): 600V

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