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IHW30N90T

Part No IHW30N90T
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT, 60A, 900V, N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series TrenchStop®
Package Bulk
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 900 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 90 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Power - Max 428 W
Switching Energy 1.8mJ (off)
Input Type Standard
Gate Charge 280 nC
Td (on/off) @ 25°C 45ns/556ns
Test Condition 600V, 30A, 15Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-1
Standard Package 113 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 602651-IHW30N90T
Ultra Librarian 3D Model Ultra Librarian IHW30N90T CAD Model

Description

The IHW30N90T is a single IGBT (Insulated Gate Bipolar Transistor) designed for high power applications. It is part of the Infineon Technologies TrenchStop™ series.

  • Maximum Power Rating: 428 W
  • Breakdown Voltage: 900 V
  • Maximum Collector Current: 60 A
  • Vce(on): 1.7V @ 15V, 30A
  • Switching Energy: 1.8mJ (off)
  • Gate Charge: 280 nC
  • Typical On/Off Delay Time @ 25°C: 45ns/556ns
  • Operating Temperature Range: -40°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0214 $60.2568
29+ $4.1201 $119.4829
44+ $3.9914 $175.6216
60+ $3.8627 $231.7620
78+ $3.7339 $291.2442
104+ $3.3477 $348.1608
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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