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Same model may have multiple batches, images only for reference.
IRFPS3810 Real Image
Same model may have multiple batches, images only for reference.

IRFPS3810

Part No IRFPS3810
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A⑥) | MOSFET N-CH 100V 170A SUPER247
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 170A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 9mOhm at 100A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 390nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 6790pF at 25V
Power Dissipation (Maximum) 580W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package SUPER-247 (TO-274AA)
Manufacturer Package TO-274AA
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1187834-IRFPS3810
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFPS3810 CAD Model

Description

Infineon Technologies IRFPS3810 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 100V.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 100V
  • Mounting Style: SUPER-247 (TO-274AA)
  • Power Dissipation (Max): 580W
  • Continuous Drain Current (Max): 170A
  • On-Resistance (Max): 9mOhm @ 100A, 10V
  • Gate Charge: 390nC @ 10V
  • Gate-Source Voltage: ±30V
  • Temperature Range: -55°C to 175°C

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