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IRFP3206PBF

Part No IRFP3206PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 60V 120A TO-247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6540pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 280W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 083590-IRFP3206PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFP3206
Introduction Date March 03, 2008
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFP3206PBF CAD Model

Description

The Infineon Technologies IRFP3206PBF is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 120A at 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 120A at 25°C
  • Power Dissipation: 280W (Tc)
  • Package: TO-247AC
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 3 mOhm @ 75A, 10V
  • Drive Voltage: 10V (Max)
  • Production Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3760 $52.2720
45+ $2.2256 $100.1520
70+ $2.1504 $150.5280
100+ $2.0000 $200.0000
130+ $1.9249 $250.2370
163+ $1.8497 $301.5011
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,280 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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