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IRF7807PBF

Name: IRF7807PBF
Brand: Infineon Technologies
SKU: 604664
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRF7807PBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	HEXFET® Chip-Set for DC-DC Converters \| MOSFET N-CH 30V 8.3A 8-SOIC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	30V
Id - Continuous Drain Current	8.3A
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Maximum) at Id, Vgs	25mOhm at 7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id	1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	17nC at 5V
Gate Source Voltage (Maximum)	±12V
Power Dissipation (Maximum)	2.5W
Mounting Style	SMD
Supplier Device Package	8-SO
Manufacturer Package	8-SOIC
Manufacturer Pack Quantity	3,800
MSL Level	1 (Unlimited)
Win Source Part Number	1187352-IRF7807PBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF7807PBF CAD Model

Description

The Infineon Technologies IRF7807PBF is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 8.3A.

Application: This power MOSFET is designed for use in a variety of applications, including power supplies, motor control, and lighting.
Gate Charge: 17nC @ 5V
Maximum Rds On: 25mOhm @ 7A and 4.5V
Package: 8-SO package
Manufacturer Pack Quantity: 3,800
Gate-Source Voltage(th) (Maximum) @ Id: 1V @ 250μA
Gate-Source Voltage (Maximum): ±12V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
90+	$0.6722	$60.4980
210+	$0.5521	$115.9410
325+	$0.5348	$173.8100
450+	$0.5174	$232.8300
580+	$0.5001	$290.0580
775+	$0.4481	$347.2775

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 9,000 pieces

MOQ: 90 pcs

Order Increment : 1 pcs

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