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Same model may have multiple batches, images only for reference.
IRF6665TR1 Real Image
Same model may have multiple batches, images only for reference.

IRF6665TR1

Part No IRF6665TR1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 100V DIRECTFET-SH
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 4.2A, 19A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 62mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 13nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 530pF at 25V
Power Dissipation (Maximum) 2.2W, 42W
Temperature Range - Operating -40°C ~ 150°C
Mounting Style SMD
Supplier Device Package DIRECTFET SH
Manufacturer Package DirectFET Isometric SH
Manufacturer Pack Quantity 1,000
MSL Level 3 (168 Hours)
Win Source Part Number 738781-IRF6665TR1
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6665TR1 CAD Model

Description

The Infineon Technologies IRF6665TR1 is a MOSFET transistor with an N-channel polarity.

  • Polarity: N-Channel
  • Package: DirectFET Isometric SH
  • Maximum Power Dissipation: 2.2W
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.6853 $51.5942
30+ $3.4476 $103.4280
46+ $3.3287 $153.1202
65+ $3.0909 $200.9085
85+ $2.9721 $252.6285
106+ $2.8532 $302.4392
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