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Same model may have multiple batches, images only for reference.
IRF6641TR1PBF Real Image
Same model may have multiple batches, images only for reference.

IRF6641TR1PBF

Part No IRF6641TR1PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description DirectFET TM MOSFET | MOSFET N-CH 200V 4.6A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 4.6A, 26A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 59.9mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.9V at 150μA
Gate Charge (Qg) (Maximum) at Vgs 48nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2290pF at 25V
Power Dissipation (Maximum) 2.8W, 89W
Temperature Range - Operating -40°C ~ 150°C
Mounting Style SMD
Supplier Device Package DIRECTFET MZ
Manufacturer Package DirectFET Isometric MZ
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 710491-IRF6641TR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6641TR1PBF CAD Model

Description

The IRF6641TR1PBF is a N-channel MOSFET transistor manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: up to 26A
  • Maximum Rds On @ Id, Vgs: 59.9mOhm @ 5.5A, 10V
  • Gate-Source Threshold Voltage: 4.9V @ 150μA
  • Maximum Gate Charge: 48nC @ 10V
  • Package: DirectFET MZ
  • Compliance: halogen-free
  • Status: obsolete

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630+ $0.4790 $301.7700
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