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DMN5L06VKQ-7

Part No DMN5L06VKQ-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET 2 N-CH 50V 280MA SOT563
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) at 25°C 280mA
Rds On (Maximum) at Id, Vgs 2Ohm at 50mA, 5V
Vgs(th) (Maximum) at Id 1.2V at 250μA
Input Capacitance (Ciss) (Maximum) at Vds 50pF at 25V
Power - Max 250mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package SOT-563, SOT-666
Supplier Device Package SOT-563
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801408-DMN5L06VKQ-7
Ultra Librarian 3D Model Ultra Librarian DMN5L06VKQ-7 CAD Model

Description

Product Overview: DMN5L06VKQ-7 from Diodes Incorporated

The DMN5L06VKQ-7 is a high-performance, N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider and manufacturer of high-quality semiconductor products. This MOSFET is part of Diodes Incorporated's extensive portfolio of discrete, analog, and mixed-signal components that cater to a wide range of electronic applications.

Featuring a compact and efficient design, the DMN5L06VKQ-7 is housed in a small SOT-23 package, making it ideal for space-constrained applications. It boasts a low on-resistance (RDS(on)) which ensures minimal power loss and heat generation during operation, enhancing the overall efficiency of the system it is integrated into.

The DMN5L06VKQ-7 is designed to handle a continuous drain current (ID) of up to 630mA, making it suitable for moderate power applications. Its low threshold voltage ensures that it can be driven by low-voltage control signals, which is advantageous for battery-powered devices and low-voltage logic interfaces.

Key Features:

  • VDS: 50V - Provides a high breakdown voltage suitable for a variety of applications.
  • RDS(on): Low on-resistance for improved efficiency and reduced power losses.
  • ID: 630mA - Capable of handling moderate levels of continuous current.
  • Fast switching speeds - Enhances performance in high-frequency applications.
  • High power and current handling capability in a small footprint.
  • RoHS compliant - Meets environmental standards for hazardous substance regulations.

The DMN5L06VKQ-7 is an excellent choice for a variety of applications, including load/switching circuits, power management, and any other systems that require a high-efficiency and reliable N-channel MOSFET. Its robustness and versatility make it a preferred component for designers looking to optimize their circuit designs for performance and space-saving.

Whether you are working on consumer electronics, portable devices, or power supply units, the DMN5L06VKQ-7 from Diodes Incorporated offers a reliable and efficient solution for your N-channel MOSFET needs. Its industry-standard packaging and superior electrical characteristics ensure that it can be easily integrated into a wide range of electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
320+ $0.1830 $58.5600
770+ $0.1502 $115.6540
1,195+ $0.1455 $173.8725
1,645+ $0.1408 $231.6160
2,125+ $0.1361 $289.2125
2,845+ $0.1220 $347.0900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,300 pieces
MOQ: 320 pcs
Order Increment : 1 pcs
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