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Same model may have multiple batches, images only for reference.
IRF3515SPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF3515SPBF

Part No IRF3515SPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Drain Current (Max) 41 A
Frequency (Max) Not Required MHz
Gate-Source Voltage (Max) 30 V
Output Power (Max) Not Required W
Power Dissipation 200 W
Mounting Surface Mount
Noise Figure Not Required dB
Drain-Source On-Res 0.045 ohm
Operating Temp Range -55C to 175C
Package Type D2PAK
Pin Count 2 +Tab
Polarity N
Type Power MOSFET
Number of Elements 1
Operating Temperature Classification Military
Channel Mode Enhancement
Drain Efficiency Not Required %
Drain-Source On-Volt 150 V
Power Gain Not Required dB
Rad Hardened No
Continuous Drain Current 41 A
DELETED Compliant
Win Source Part Number 040677-IRF3515SPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3515SPBF CAD Model

Description

The Infineon Technologies 040677-IRF3515SPBF is a power MOSFET designed for military applications.

  • Mounting Style: surface mount
  • Package Type: D2PAK
  • Polarity: N
  • Channel Mode: enhancement
  • Maximum Gate-Source Voltage: 30V
  • Continuous Drain Current: up to 41A
  • Power Dissipation: 200W
  • Drain-Source On-Voltage: 150V
  • Drain-Source On-Resistance: 0.045 ohm
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
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Availability: 22,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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