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IRF3205ZS

Part No IRF3205ZS
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 55V 75A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6.5mOhm at 66A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3450pF at 25V
Power Dissipation (Maximum) 170W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186958-IRF3205ZS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF3205ZS CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 75A.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A
  • On-Resistance: 6.5mOhm @ 66A and 10V
  • Power Dissipation: 170W
  • Temperature Range: -55°C to 175°C
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 3450pF @ 25V
  • Gate Charge: 110nC @ 10V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplied In: Pack of 50 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3774 $50.9490
285+ $0.3535 $100.7475
440+ $0.3415 $150.2600
630+ $0.3177 $200.1510
820+ $0.3057 $250.6740
1,025+ $0.2938 $301.1450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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