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IPP120N08S404AKSA1

Part No IPP120N08S404AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 120A TO220-3 / N-Channel 80 V 120A (Tc) 179W (Tc) Through Hole PG-TO220-3-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 25 V
Power Dissipation (Max) 179W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000989096
Standard Package 500
Win Source Part Number 1028131-IPP120N08S404AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP120N08S404AKSA1 CAD Model

Description

The Infineon Technologies 1028131-IPP120N08S404AKSA1 is an N-Channel MOSFET transistor from the OptiMOS™ series.

  • Manufacturer: Infineon Technologies
  • Product Name: 1028131-IPP120N08S404AKSA1
  • Type: N-Channel MOSFET transistor
  • Series: OptiMOS™
  • Maximum Drain-Source Voltage: 80V
  • Continuous Drain Current: 120A
  • Maximum On-Resistance: 4.4mOhm
  • Gate Charge: 95 nC
  • Package: TO-220-3
  • Operating Temperature: -55°C to 175°C
  • Application: Transistors - FETs, MOSFETs - Single
  • Certification: AEC-Q101 certified product

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