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Same model may have multiple batches, images only for reference.
IPP100P03P3L-04 Real Image
Same model may have multiple batches, images only for reference.

IPP100P03P3L-04

Part No IPP100P03P3L-04
Manufacturer Infineon Technologies
Catalog FETs - Single
Description OptiMOS-P Trench Power-Transistor | MOSFET P-CH 30V 100A TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 100A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 4.3mOhm at 80A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.1V at 475μA
Gate Charge (Qg) (Maximum) at Vgs 200nC at 10V
Gate Source Voltage (Maximum) +5V, -16V
Input Capacitance (Ciss) (Maximum) at Vds 9300pF at 25V
Power Dissipation (Maximum) 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package PG-TO220-3-1
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1186308-IPP100P03P3L-04
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP100P03P3L-04 CAD Model

Description

The IPP100P03P3L-04 is a power MOSFET designed for use in high-current applications from Infineon Technologies.

  • Type: P-channel MOSFET
  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current: 100A
  • Maximum On-Resistance: 4.3mOhm @ 80A and 10V gate-source voltage
  • Package: TO-220-3
  • Mounting: Through-Hole Technology
  • Power Dissipation: 200W
  • Input Capacitance: 9300pF @ 25V
  • Operating Temperature Range: -55°C to 175°C
  • Status: Obsolete
  • Supply and Demand Status: Limited

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