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IPG20N06S2L65ATMA1

Name: IPG20N06S2L65ATMA1
Brand: Infineon Technologies
SKU: 158453
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IPG20N06S2L65ATMA1
Manufacturer	Infineon Technologies
Catalog	FETs - Arrays
Description	MOSFET 2N-CH 55V 20A TDSON-8-4
Datasheet	IPG20N06S2L65ATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Reel(TR)
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	20A
Rds On (Max) @ Id, Vgs	65 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2V @ 14μA
Gate Charge (Qg) @ Vgs	12nC @ 10V
Input Capacitance (Ciss) @ Vds	410pF @ 25V
Power - Max	43W
Operating Temperature Range	-55°C ~ 175°C (TJ)
Mounting Style	SMD/SMT
Package	8-PowerVDFN
Manufacturer Device Package	PG-TDSON-8-4 (5.15x6.15)
Win Source Part Number	101951-IPG20N06S2L65ATMA1
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPG20N06S2L65ATMA1 CAD Model

Description

The Infineon Technologies OptiMOS? MOSFET is a dual N-Channel transistor.

Manufacturer: Infineon Technologies
Vdss: 55V
Continuous Drain Current @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 14μA
Gate Charge (Qg) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) @ Vds: 410pF @ 25V
Package: PG-TDSON-8-4 (5.15x6.15)
Mounting Technology: SMD/SMT
Product Category: discrete semiconductor products
Popularity: medium

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
75+	$0.6964	$52.2300
175+	$0.5715	$100.0125
275+	$0.5536	$152.2400
375+	$0.5357	$200.8875
485+	$0.5179	$251.1815
650+	$0.4643	$301.7950

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 5,000 pieces

MOQ: 75 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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