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Same model may have multiple batches, images only for reference.
IPG20N06S2L65ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPG20N06S2L65ATMA1

Part No IPG20N06S2L65ATMA1
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET 2N-CH 55V 20A TDSON-8-4
Datasheet
IPG20N06S2L65ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Reel(TR)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 65 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 14μA
Gate Charge (Qg) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) @ Vds 410pF @ 25V
Power - Max 43W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style SMD/SMT
Package 8-PowerVDFN
Manufacturer Device Package PG-TDSON-8-4 (5.15x6.15)
Win Source Part Number 101951-IPG20N06S2L65ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPG20N06S2L65ATMA1 CAD Model

Description

The Infineon Technologies OptiMOS? MOSFET is a dual N-Channel transistor.

  • Manufacturer: Infineon Technologies
  • Vdss: 55V
  • Continuous Drain Current @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 14μA
  • Gate Charge (Qg) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 410pF @ 25V
  • Package: PG-TDSON-8-4 (5.15x6.15)
  • Mounting Technology: SMD/SMT
  • Product Category: discrete semiconductor products
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6964 $52.2300
175+ $0.5715 $100.0125
275+ $0.5536 $152.2400
375+ $0.5357 $200.8875
485+ $0.5179 $251.1815
650+ $0.4643 $301.7950
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