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Same model may have multiple batches, images only for reference.
IPB60R280P6ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB60R280P6ATMA1

Part No IPB60R280P6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 13.8A D2PAK / N-Channel 600 V 13.8A (Tc) 104W (Tc) Surface Mount PG-TO263-3
Datasheet
IPB60R280P6ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P6
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 25.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB60R280
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001364468
Standard Package 1,000
Win Source Part Number 1065224-IPB60R280P6ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB60R280P6ATMA1 CAD Model

Description

The IPB60R280P6ATMA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • Power Dissipation: 104W
  • Voltage Breakdown: 600 V
  • Continuous Drain Current: 13.8 A
  • Rds On: 280mOhm @ 5.2A, 10V
  • Gate Charge: 25.5 nC @ 10 V
  • Input Capacitance: 1190 pF @ 100 V
  • Package: TO-263-3
  • Operating Temperature: -55°C to 150°C
  • Suitable for: power supplies, motor control, and DC-DC converters

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