IPA50R280CE Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 13A
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Maximum) at Id, Vgs 280mOhm at 4.2A, 13V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 350μA
Gate Charge (Qg) (Maximum) at Vgs 32.6nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 773pF at 100V
FET Feature Super Junction
Power Dissipation (Maximum) 30.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PG-TO220-FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1185971-IPA50R280CE
Manufacturer Homepage www.infineon.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPA50R280CE CAD Model

Description

The Infineon Technologies IPA50R280CE is an N-channel Super Junction MOSFET designed for use in discrete semiconductor products manufactured by Infineon Technologies.

  • Power Dissipation: 30.4W.
  • Drain-Source Breakdown Voltage: 500V.
  • Maximum Rds On: 280mOhm @ 4.2A, 13V.
  • Gate-Source Threshold Voltage: 3.5V @ 350μA.
  • Package: PG-TO220-FP.
  • Operating Temperature Range: -55°C ~ 150°C.
  • Popularity: Popular.
  • Supply and Demand: Balanced.
  • Quantity per Package: 50.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6959 $52.1925
180+ $0.5710 $102.7800
275+ $0.5532 $152.1300
375+ $0.5353 $200.7375
485+ $0.5175 $250.9875
650+ $0.4640 $301.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 28,690 pieces
MOQ: 75 pcs
Order Increment : 1 piece
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