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Same model may have multiple batches, images only for reference.
IAUC60N04S6L030HATMA1 Real Image
Same model may have multiple batches, images only for reference.

IAUC60N04S6L030HATMA1

Part No IAUC60N04S6L030HATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IAUC60N04S6L030HATMA1 / Mosfet Array 2 N-Channel (Half Bridge) 40V 60A (Tj) 75W (Tc) Surface Mount PG-TDSON-8-56
Datasheet
IAUC60N04S6L030HATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 60A (Tj)
Rds On (Max) @ Id, Vgs 3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2128pF @ 25V
Power - Max 75W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-56
Base Product Number IAUC60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IAUC60N04S6L030HATMA1CT,448-IAUC60N04S6L030HATMA1TR,SP004134512,448-IAUC60N04S6L030HATMA1DKR
Standard Package 5,000
Win Source Part Number 1119534-IAUC60N04S6L030HATMA1
Ultra Librarian 3D Model Ultra Librarian IAUC60N04S6L030HATMA1 CAD Model

Description

The IAUC60N04S6L030HATMA1 is a half-bridge N-channel MOSFET array designed for automotive applications.

  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 60A @ 25°C
  • Maximum Rds On: 3mOhm @ 30A and 10V
  • Gate Threshold Voltage: 2V @ 25μA
  • Maximum Gate Charge: 35nC @ 10V
  • Package: 8-PowerVDFN package
  • Operating Temperature: -55°C to 175°C
  • Packaging: Tape and reel
  • Standard Package: 5,000

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340+ $0.8915 $303.1100
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