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Same model may have multiple batches, images only for reference.
F3L25R12W1T4B27BOMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

F3L25R12W1T4B27BOMA1

Part No F3L25R12W1T4B27BOMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description MODULE IGBT 1200V EASY1B-2
Datasheet
F3L25R12W1T4B27BOMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Infineon Technologies
Series -
Package Tray
Product Status Active
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 45 A
Power - Max 215 W
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 25A
Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 1.45 nF @ 25 V
Input Standard
NTC Thermistor Yes
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-EASY1B
Base Product Number F3L25R12
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376613-F3L25R12W1T4B27BOMA1
Ultra Librarian 3D Model Ultra Librarian F3L25R12W1T4B27BOMA1 CAD Model

Description

The Infineon Technologies 1376613-F3L25R12W1T4B27BOMA1 is a high-performance IGBT module designed for use in various applications.

  • Maximum Current Rating: 45 A
  • Voltage Rating: 1200 V
  • Configuration: Half Bridge
  • Input Interface: Standard
  • Package: AG-EASY1B
  • Mounting Type: Chassis Mount
  • Power Rating: 215 W
  • Input Capacitance: 1.45 nF
  • Thermistor: NTC Thermistor
  • Product Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
  • Status: Active
  • Package: Tray

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