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BSS126

Part No BSS126
Manufacturer Infineon Technologies
Catalog END - OF - LIFE
Description SIPMOS® Small-Signal-Transistor
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Manufacturer Infineon Technologies
Win Source Part Number 1154902-BSS126
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS126 CAD Model

Description

The BSS126 is a P-Channel enhancement mode logic level MOSFET from Infineon Technologies. This device is designed for low voltage, low current applications where efficient power management is crucial. It is particularly well-suited for portable devices and battery-powered systems.

Applications:

  • Load Switching: Used to switch power to various components within a system.
  • Battery Management Systems: Found in battery charging and discharging circuits.
  • DC-DC Conversion: Can be implemented in DC-DC converters for voltage regulation.
  • Portable Devices: Common in applications where small size and low power consumption are essential.
  • Logic Level Interfacing: Suitable for interfacing directly with logic circuits.

Features:

  • Logic Level: Designed to be driven directly from logic level signals.
  • Low On-Resistance (RDS(on)): Minimizes power loss during switching.
  • Small Footprint: Available in small surface mount packages for space-constrained applications.
  • Enhancement Mode: Requires a positive gate voltage to turn on.
  • P-Channel: Allows for sourcing current.

Benefits:

  • Energy Efficiency: Low on-resistance reduces power dissipation and improves energy efficiency.
  • Simplified Circuit Design: Logic level gate drive simplifies interface with microcontrollers and other digital circuits.
  • Compact Design: Small package size enables compact and lightweight designs.
  • Extended Battery Life: Low power consumption extends battery life in portable devices.
  • Reliable Switching: Provides stable and reliable switching performance.

Additional Details:

The BSS126 typically features a drain-source voltage (VDS) rating suitable for low voltage applications. The gate-source voltage (VGS) is also specified to ensure reliable operation within the defined limits. The device's RDS(on) is a critical parameter, indicating the resistance between the drain and source when the MOSFET is fully turned on; lower values result in lower power loss and improved efficiency. It is typically available in a SOT-23 or similar small surface mount package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1166 $50.1380
1,045+ $0.0957 $100.0065
1,620+ $0.0927 $150.1740
2,230+ $0.0897 $200.0310
2,885+ $0.0867 $250.1295
3,860+ $0.0778 $300.3080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,000 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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