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AUIRF7313Q International Rectifier

Same model may have multiple batches, images only for reference.

AUIRF7313Q International Rectifier

Same model may have multiple batches, images only for reference.

AUIRF7313Q

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Part No	AUIRF7313Q
Manufacturer	Infineon Technologies
Catalog	FETs - Arrays
Description	MOSFET 2N-CH 30V 6.5A 8SOIC
Datasheet	AUIRF7313Q Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
Product Status	Obsolete
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6.9A
Rds On (Max) @ Id, Vgs	29mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	755pF @ 25V
Power - Max	2.4W
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC
Base Product Number	AUIRF7313
Standard Package	95 pcs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	567115-AUIRF7313Q
Ultra Librarian 3D Model	Ultra Librarian AUIRF7313Q CAD Model

Description

The AUIRF7313Q is a dual N-Channel MOSFET transistor array from Infineon Technologies.

Manufacturer: Infineon Technologies
Product Name: AUIRF7313Q
Series: HEXFET
Channel Type: Dual N-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id): 6.9A @ 25°C
Rds On (Max): 29mOhm
Package: 8-SOIC
Mounting Type: Surface Mount
Gate Charge (Qg): 33nC
Input Capacitance (Ciss): 755pF
Operating Temperature: -55°C to 175°C
Status: Obsolete

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Quantity	Unit Price	Ext. Price
35+	$1.6817	$58.8595
85+	$1.3802	$117.3170
130+	$1.3363	$173.7190
180+	$1.2936	$232.8480
235+	$1.2509	$293.9615
310+	$1.1215	$347.6650

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