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Same model may have multiple batches, images only for reference.
RFP45N02L
Same model may have multiple batches, images only for reference.

RFP45N02L

Part No RFP45N02L
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET / N-Channel 20 V 45A (Tc) 90W (Tc) Through Hole TO-220
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Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Harris Corporation
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 22mOhm @ 45A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 15 V
Power Dissipation (Max) 90W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-RFP45N02L,HARHARRFP45N02L
Standard Package 1
Win Source Part Number 1119426-RFP45N02L
Ultra Librarian 3D Model Ultra Librarian RFP45N02L CAD Model

Description

The RFP45N02L is a discrete semiconductor product that belongs to the Transistors - FETs, MOSFETs - Single category.

  • Manufacturer: Harris Corporation
  • Product Category: Transistors - FETs, MOSFETs - Single
  • FET Type: N-Channel MOSFET
  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 45A (Tc)
  • Maximum Rds On: 22mOhm @ 45A and 5V
  • Power Dissipation (Max): 90W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
  • Operating Temperature Range: -55°C to 175°C (TJ)

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