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IRF632

Part No IRF632
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET / N-Channel 200 V 8A (Tc) 75W (Tc) Through Hole TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Harris Corporation
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names HARHARIRF632,2156-IRF632
Standard Package 1
Win Source Part Number 1065497-IRF632
Ultra Librarian 3D Model Ultra Librarian IRF632 CAD Model

Description

The IRF632 is a N-channel MOSFET transistor that comes in a TO-220AB package.

  • Channel Type: N-channel
  • Package: TO-220AB
  • Drain to Source Voltage (Vdss): 200 V
  • Continuous Drain Current (Id) @ 25°C: 8A
  • Maximum On-Resistance (Rds On) @ 5A, 10V: 600mOhm
  • Gate Charge (Qg) @ 10V: 30 nC
  • Input Capacitance (Ciss) @ 25 Vds: 600 pF
  • Operating Temperature Range: -55°C to 150°C
  • Applications: Power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7116 $59.9060
85+ $1.4045 $119.3825
130+ $1.3606 $176.8780
180+ $1.3167 $237.0060
230+ $1.2728 $292.7440
305+ $1.1411 $348.0355
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,960 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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